- Product Model GT50N322A
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description IGBT 1000V 50A TO3P
- Categories Single IGBTs
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PDF
- In Stock 1597
Technical Details
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 800 ns
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
- Supplier Device Package TO-3P(N)
- Current - Collector (Ic) (Max) 50 A
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Current - Collector Pulsed (Icm) 120 A
- Power - Max 156 W
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


