- Product Model APTGT75A170D1G
- Brand Microsemi Corporation
- RoHS No
- Description IGBT MODULE 1700V 120A 520W D1
- Categories БТИЗ-модули
-
PDF
- In Stock 1500
Technical Details
- Package / Case D1
- Mounting Type Chassis Mount
- Input Standard
- Configuration Half Bridge
- Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
- NTC Thermistor No
- Supplier Device Package D1
- IGBT Type Trench Field Stop
- Current - Collector (Ic) (Max) 120 A
- Voltage - Collector Emitter Breakdown (Max) 1700 V
- Power - Max 520 W
- Current - Collector Cutoff (Max) 5 mA
- Input Capacitance (Cies) @ Vce 6.5 nF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


