- 产品型号 AFGY120T65SPD
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 IGBT - 650 V 120 A FS3 FOR EV TR
- 分类 单 IGBT
-
PDF
- 库存 1500
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 107 ns
- Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
- Supplier Device Package TO-247-3
- IGBT Type Trench Field Stop
- Td (on/off) @ 25°C 40ns/80ns
- Switching Energy 6.6mJ (on), 3.8mJ (off)
- Test Condition 400V, 120A, 5Ohm, 15V
- Gate Charge 125 nC
- Grade Automotive
- Current - Collector (Ic) (Max) 160 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector Pulsed (Icm) 360 A
- Power - Max 714 W
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


