技术参数

• Package / Case 4-DIP (0.100", 2.54mm)
• Output Type Phototransistor
• Sensing Distance 0.197" (5mm)
• Sensing Method Reflective
• Mounting Type Through Hole
• Current - Collector (Ic) (Max) 20 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Current - DC Forward (If) (Max) 50 mA
• ECCN EAR99
• HTSUS 8541.49.8000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant