- 产品型号 APT45GR65SSCD10
- 品牌 Microsemi Corporation
- RoHS No
- 描述 INSULATED GATE BIPOLAR TRANSISTO
- 分类 单 IGBT
-
PDF
- 库存 1500
技术参数
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 80 ns
- Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
- Supplier Device Package D3PAK
- IGBT Type NPT
- Td (on/off) @ 25°C 15ns/100ns
- Test Condition 433V, 45A, 4.3Ohm, 15V
- Gate Charge 203 nC
- Current - Collector (Ic) (Max) 118 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector Pulsed (Icm) 224 A
- Power - Max 543 W
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


