- Product Model GT50JR22(STA1,E,S)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-F IGBT / TRANSISTOR TO-3PN(OS
- Classification Single IGBTs
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Technical Details
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Input Type Standard
- Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
- Supplier Device Package TO-3P(N)
- Current - Collector (Ic) (Max) 50 A
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Current - Collector Pulsed (Icm) 100 A
- Power - Max 230 W
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