- Product Model RGT8NS65DGTL
- Brand ROHM Semiconductor
- RoHS Yes
- Description IGBT TRENCH FIELD 650V 8A LPDS
- Classification Single IGBTs
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Inventory:1500
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 175°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 40 ns
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
- Supplier Device Package LPDS
- IGBT Type Trench Field Stop
- Td (on/off) @ 25°C 17ns/69ns
- Test Condition 400V, 4A, 50Ohm, 15V
- Gate Charge 13.5 nC
- Current - Collector (Ic) (Max) 8 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector Pulsed (Icm) 12 A
- Power - Max 65 W