- Product Model GT60N321(Q)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description IGBT 1000V 60A 170W TO3P LH
- Categories Одиночные IGBT
-
PDF
- In Stock 1500
Technical Details
- Package / Case TO-3PL
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 2.5 µs
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
- Supplier Device Package TO-3P(LH)
- Td (on/off) @ 25°C 330ns/700ns
- Current - Collector (Ic) (Max) 60 A
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Current - Collector Pulsed (Icm) 120 A
- Power - Max 170 W
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


